The Effect of the Semiconductive Screen on Space Charge Suppression in Cross-Linked Polyethylene

The space charge distributions of cross-linked polyethylene （XLPE） with Borouge＇s BorlinkTM semiconductive screen type LE0550 and LE0595 from a pulsed electro-acoustic method are obtained. The contact interface morphology at the semiconductive screen and the structure of XLPE near the interface are...

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Bibliographic Details
Published inChinese physics letters Vol. 31; no. 10; pp. 112 - 115
Main Author 李琳 宋伟 王暄 雷清泉
Format Journal Article
LanguageEnglish
Published 01.10.2014
Subjects
XLPE
交联聚乙烯
介电特性
半导体
导电
屏幕
接触界面
空间电荷分布
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/31/10/107301

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Summary:The space charge distributions of cross-linked polyethylene （XLPE） with Borouge＇s BorlinkTM semiconductive screen type LE0550 and LE0595 from a pulsed electro-acoustic method are obtained. The contact interface morphology at the semiconductive screen and the structure of XLPE near the interface are characterized. The dielectric spectrum and the conductivity current of XLPE with the different semiconduetive electrodes are com- pared. The semiconduetive screen changes the structure and the dielectric characteristic of XLPE near the contact interface, which may be the main reason for space charge suppression in XLPE with Borouge＇s type LEO550 semiconduetive screen.
Bibliography:11-1959/O4
LI Lin, HAN Bai, SONG Wei, WANG Xuan, LEI Qing-Quan（ State Key Laboratory Breeding Base of Dielectrics Engineering, Harbin University of Science and Technology, Harbin 150080 Key LaboratoLv of Engineering Dielectrics and Its Application （Ministry of Education）, Harbin University of Science and Technology, Harbin 150080 College of Electrical ＆ Electronic Engineer, Harbin University of Science and Technology, Harbin 150080）
The space charge distributions of cross-linked polyethylene （XLPE） with Borouge＇s BorlinkTM semiconductive screen type LE0550 and LE0595 from a pulsed electro-acoustic method are obtained. The contact interface morphology at the semiconductive screen and the structure of XLPE near the interface are characterized. The dielectric spectrum and the conductivity current of XLPE with the different semiconduetive electrodes are com- pared. The semiconduetive screen changes the structure and the dielectric characteristic of XLPE near the contact interface, which may be the main reason for space charge suppression in XLPE with Borouge＇s type LEO550 semiconduetive screen.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/10/107301