张建军, 王. 刘. (2016). Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates. Chinese physics letters, 33(4), 52-55. https://doi.org/10.1088/0256-307X/33/4/044207
Chicago Style (17th ed.) Citation张建军, 王霆 刘会赞. "Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates." Chinese Physics Letters 33, no. 4 (2016): 52-55. https://doi.org/10.1088/0256-307X/33/4/044207.
MLA (9th ed.) Citation张建军, 王霆 刘会赞. "Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates." Chinese Physics Letters, vol. 33, no. 4, 2016, pp. 52-55, https://doi.org/10.1088/0256-307X/33/4/044207.
Warning: These citations may not always be 100% accurate.