Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates

The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit den...

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Bibliographic Details
Published inChinese physics letters Vol. 33; no. 4; pp. 52 - 55
Main Author 王霆 刘会赞 张建军
Format Journal Article
LanguageEnglish
Published 01.04.2016
Subjects
InAs/GaAs量子点
InAs量子点
Si衬底
Si（100）
光致发光
外延生长
温度依赖
特性
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/33/4/044207

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Summary:The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.
Bibliography:The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.
11-1959/O4
Ting Wang, Hui-Yun Liu， Jian-Jun Zhang 1Institute of Physics, Chinese Academy of Sciences, Beijing 100190 2Department of Electronic ＆ Electrical Engineering, University College London, Torrington Place WCIE 7JE United Kingdom
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/4/044207