Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm

A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InA...

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Bibliographic Details
Published inChinese physics B Vol. 26; no. 8; pp. 565 - 568
Main Author 徐建星 李金伦 魏思航 马奔 张翼 张宇 倪海桥 牛智川
Format Journal Article
LanguageEnglish
Published 01.08.2017
Subjects
InGaAs
PCAS
优化
光导
天线
太赫兹
宽带
面型
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/8/088702

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Summary:A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAIAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.
Bibliography:THz, InGaAs/InAIAs MLHS, photoconductive antenna
Jian-Xing Xu1,2, Jin-Lun Li1, Si-Hang Wei1,2, Ben Ma1,2, Yi Zhang3, Yu Zhang1,2, Hai-Qiao Ni1,2, and Zhi-Chuan Niu1,2 （ 1 State Key Laboratory lbr Supedattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2 College of Materials Science and Opto-Electronic Technology. University of Chinese Academy of Sciences, Beijing 100049, China 3 Daheng New Epock Technology Inc., Beijing 100085, China）
11-5639/O4
A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAIAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/8/088702