Random telegraph noise on the threshold voltage of multi-level flash memory

We investigate the impact of random telegraph noise（RTN） on the threshold voltage of multi-level NOR flash memory.It is found that the threshold voltage variation（？Vth） and the distribution due to RTN increase with the programmed level（Vth） of flash cells. The gate voltage dependence of RTN amplitud...

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Bibliographic Details
Published inChinese physics B Vol. 26; no. 1; pp. 547 - 551
Main Author 廖轶明 纪小丽 徐跃 张城绪 郭强 闫锋
Format Journal Article
LanguageEnglish
Published 2017
Subjects
CAD仿真
NOR闪存
噪声
多级
电报
阈值电压
随机
隧道氧化层
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/1/018502

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Summary:We investigate the impact of random telegraph noise（RTN） on the threshold voltage of multi-level NOR flash memory.It is found that the threshold voltage variation（？Vth） and the distribution due to RTN increase with the programmed level（Vth） of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.
Bibliography:random telegraph noise; NOR flash memory; percolation path; oxide charges
11-5639/O4
We investigate the impact of random telegraph noise（RTN） on the threshold voltage of multi-level NOR flash memory.It is found that the threshold voltage variation（？Vth） and the distribution due to RTN increase with the programmed level（Vth） of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.
Yiming Liao1,Xiaoli Ji1,Yue Xu3,Chengxu Zhang1,Qiang Guo2,Feng Yan1（1. College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China; 2. Quality and Reliability Engineering, Wuhan Xinxin Semiconductor Manufacturing Company, Wuhan, China; 3. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China）
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/1/018502