Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

• Published in: Chinese physics letters Vol. 33; no. 3; pp. 95 - 98
• Main Author: 袁建辉 陈妮 莫华 张燕 张志海
• Format: Journal Article
• Language: English
• Published: 01.03.2016
• Subjects: δ掺杂; 烯基; 电导振荡; 石墨; 磁性隧道结; 磁阻元件; 负磁阻效应; 隧道磁电阻
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/33/3/037302

We investigate the tunneling magnetoresistance via δ doping in a graphei2e-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 8 doping. Also, both the transmission probability and the conductance at the paxallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping.