Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

We investigate the tunneling magnetoresistance via δ doping in a graphei2e-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 8 doping. Also, both the transmission probability and the conduc...

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Bibliographic Details
Published inChinese physics letters Vol. 33; no. 3; pp. 95 - 98
Main Author 袁建辉 陈妮 莫华 张燕 张志海
Format Journal Article
LanguageEnglish
Published 01.03.2016
Subjects
δ掺杂
烯基
电导振荡
石墨
磁性隧道结
磁阻元件
负磁阻效应
隧道磁电阻
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/33/3/037302

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Summary:We investigate the tunneling magnetoresistance via δ doping in a graphei2e-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 8 doping. Also, both the transmission probability and the conductance at the paxallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping.
Bibliography:11-1959/O4
Jian-Hui Yuan, Ni Chen, Hua Mo, Yah Zhang, Zhi-Hai Zhang （ 1Department of Physics, Guangxi Medical University, Nanning 530021; 2School of Physics and Electronics, Yancheng Teachers University, Yaneheng 224051）
We investigate the tunneling magnetoresistance via δ doping in a graphei2e-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 8 doping. Also, both the transmission probability and the conductance at the paxallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/3/037302