Optical response of tunable terahertz plasmon in a grating-gated graphene transistor
Tunable terahertz plasmon in a graphene-based device with a grating serving as a top gate is studied. Transmission spectra exhibit a distinct peak in the terahertz region when the terahertz electric field is perpendicular to the grating fingers.Our results show that the extinction in the transmissio...
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          | Published in | Chinese physics B Vol. 26; no. 9; pp. 454 - 458 | 
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| Main Author | |
| Format | Journal Article | 
| Language | English | 
| Published | 
          
        01.08.2017
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| Subjects | |
| Online Access | Get full text | 
| ISSN | 1674-1056 2058-3834  | 
| DOI | 10.1088/1674-1056/26/9/097802 | 
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| Summary: | Tunable terahertz plasmon in a graphene-based device with a grating serving as a top gate is studied. Transmission spectra exhibit a distinct peak in the terahertz region when the terahertz electric field is perpendicular to the grating fingers.Our results show that the extinction in the transmission of single-layer graphene shields beyond 80%. Electronic results further show that the graphene plasmon can be weakly adjusted by tuning the gate voltage. Theoretical calculation also implies that the plasmon frequency of graphene can fall into the terahertz region of 1–2 THz by improving the sustaining ability and capacitance of the top gate. | 
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| Bibliography: | 11-5639/O4 graphene plasmon Lorentz terahertz time-domain spectroscopy electrical measurement Tunable terahertz plasmon in a graphene-based device with a grating serving as a top gate is studied. Transmission spectra exhibit a distinct peak in the terahertz region when the terahertz electric field is perpendicular to the grating fingers.Our results show that the extinction in the transmission of single-layer graphene shields beyond 80%. Electronic results further show that the graphene plasmon can be weakly adjusted by tuning the gate voltage. Theoretical calculation also implies that the plasmon frequency of graphene can fall into the terahertz region of 1–2 THz by improving the sustaining ability and capacitance of the top gate.  | 
| ISSN: | 1674-1056 2058-3834  | 
| DOI: | 10.1088/1674-1056/26/9/097802 |