Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials
Physical implications of the activation energy derived from temperature dependent photoluminescence（PL） of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible...
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| Published in | Chinese physics B Vol. 26; no. 7; pp. 311 - 315 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2017
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/26/7/077101 |
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| Abstract | Physical implications of the activation energy derived from temperature dependent photoluminescence（PL） of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves. |
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| AbstractList | Physical implications of the activation energy derived from temperature dependent photoluminescence（PL） of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves. |
| Author | 杨静 赵德刚 江德生 陈平 刘宗顺 朱建军 李翔 刘炜 梁锋 张立群 杨辉 王文杰 李沫 |
| AuthorAffiliation | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China Microsystem ＆ Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China |
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| Cites_doi | 10.1143/JJAP.40.3075 10.1063/1.122164 10.1063/1.1531837 10.1103/PhysRevLett.110.087404 10.1063/1.1868059 10.1063/1.1746499 10.1063/1.119797 10.1063/1.1769099 10.1063/1.1370368 10.1143/JJAP.45.8719 10.1063/1.2433700 10.1103/PhysRevB.64.115205 10.1063/1.118455 10.1007/978-3-662-03462-0 |
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| Notes | Physical implications of the activation energy derived from temperature dependent photoluminescence（PL） of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves. nitride materials; temperature dependent photoluminescence; activation energy Jing Yang1,De-Gang Zhao1,2,De-Sheng Jiang1,Ping Chen1,Zong-Shun Liu1,Jian-Jun Zhu1,Xiang Li1,Wei Liu1,Feng Liang1,Li-Qun Zhang3,Hui Yang1,3,Wen-Jie Wang4,Mo Li4（ 1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China ; 3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China ;4 Microsystem ＆ Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China） 11-5639/O4 |
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| References | Sun Q (3) 2016; 37 11 12 Sasaki A (15) 2006; 45 13 14 16 18 Li X (17) 2017; 26 19 Nagahama S (20) 2001; 40 Jiang L R (4) 2016; 37 Yang J (2) 2014; 23 1 6 7 Gong X Q (5) 2016; 37 9 Li J M (8) 2016; 37 10 |
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| SubjectTerms | InGaN 光源 光致 发光强度 基础材料 活化能 温度变化 物理意义 |
| Title | Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials |
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