Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Physical implications of the activation energy derived from temperature dependent photoluminescence（PL） of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible...

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Published inChinese physics B Vol. 26; no. 7; pp. 311 - 315
Main Author 杨静 赵德刚 江德生 陈平 刘宗顺 朱建军 李翔 刘炜 梁锋 张立群 杨辉 王文杰 李沫
Format Journal Article
LanguageEnglish
Published 01.06.2017
Subjects
InGaN
光源
光致
发光强度
基础材料
活化能
温度变化
物理意义
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/7/077101

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Summary:Physical implications of the activation energy derived from temperature dependent photoluminescence（PL） of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.
Bibliography:Physical implications of the activation energy derived from temperature dependent photoluminescence（PL） of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.
nitride materials; temperature dependent photoluminescence; activation energy
Jing Yang1,De-Gang Zhao1,2,De-Sheng Jiang1,Ping Chen1,Zong-Shun Liu1,Jian-Jun Zhu1,Xiang Li1,Wei Liu1,Feng Liang1,Li-Qun Zhang3,Hui Yang1,3,Wen-Jie Wang4,Mo Li4（ 1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China ; 3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China ;4 Microsystem ＆ Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China）
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/7/077101