Pattern dependence in synergistic effects of total dose on single-event upset hardness
The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral cir...
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Published in | Chinese physics B Vol. 25; no. 9; pp. 463 - 467 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.09.2016
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Subjects | |
Online Access | Get full text |
ISSN | 1674-1056 2058-3834 |
DOI | 10.1088/1674-1056/25/9/096109 |
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Summary: | The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs. |
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Bibliography: | The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs. pattern dependence total dose single event upset(SEU) static random access memory(SRAM) Hongxia Guo, Lili Ding, Yao Xiao, Fengqi Zhang, Yinhong Luo, Wen Zhao, and Yuanming Wang( State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China) 11-5639/O4 |
ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/25/9/096109 |