Pattern dependence in synergistic effects of total dose on single-event upset hardness

The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral cir...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 25; no. 9; pp. 463 - 467
Main Author 郭红霞 丁李利 肖尧 张凤祁 罗尹虹 赵雯 王园明
Format Journal Article
LanguageEnglish
Published 01.09.2016
Subjects
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/25/9/096109

Cover

More Information
Summary:The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.
Bibliography:The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.
pattern dependence total dose single event upset(SEU) static random access memory(SRAM)
Hongxia Guo, Lili Ding, Yao Xiao, Fengqi Zhang, Yinhong Luo, Wen Zhao, and Yuanming Wang( State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China)
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/9/096109