Single Mode 2 μm GaSb Based Laterally Coupled Distributed Feedback Quantum-Well Laser Diodes with Metal Grating

Room-temperature operation of a GaSh based laterally coupled distributed feedback quantum-well laser diode emitting at 2 μm is demonstrated. The device exhibits single longitudinal mode characteristic as a result of the first order Cr-Bragg gratings alongside the narrow ridge waveguide. We design th...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 7; pp. 76 - 79
Main Author 宋玉志 张宇 宋甲坤 李康文 张祖银 徐云 宋国峰 陈良惠
Format Journal Article
LanguageEnglish
Published 01.07.2015
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/7/074206

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Summary:Room-temperature operation of a GaSh based laterally coupled distributed feedback quantum-well laser diode emitting at 2 μm is demonstrated. The device exhibits single longitudinal mode characteristic as a result of the first order Cr-Bragg gratings alongside the narrow ridge waveguide. We design the laser structure to obtain a critical coupling condition corresponding to a coupling coefficient of 12cm-1. For a I-mm-iong uncoated laser diode with a 3-μm-wide stripe, a single mode output spectrum with side mode suppression ratio as high as 28.5 dB is achieved, and the maximum single mode continuous-wave output power is about 11 mW at room temperature.
Bibliography:11-1959/O4
SONG Yu-Zhi, ZHANG Yu, SONG Jia-Kun, LI Kang-Wen, ZHANG Zu-Yin, XU Yun, SONG Guo-Feng, CHEN Liang-Hui( Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083)
Room-temperature operation of a GaSh based laterally coupled distributed feedback quantum-well laser diode emitting at 2 μm is demonstrated. The device exhibits single longitudinal mode characteristic as a result of the first order Cr-Bragg gratings alongside the narrow ridge waveguide. We design the laser structure to obtain a critical coupling condition corresponding to a coupling coefficient of 12cm-1. For a I-mm-iong uncoated laser diode with a 3-μm-wide stripe, a single mode output spectrum with side mode suppression ratio as high as 28.5 dB is achieved, and the maximum single mode continuous-wave output power is about 11 mW at room temperature.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/7/074206