Recrystallization Phase in He-Implanted 6H-SiC

• Published in: Chinese physics letters Vol. 34; no. 7; pp. 160 - 163
• Main Author: 刘玉柱 李炳生 林华 张莉
• Format: Journal Article
• Language: English
• Published: 01.06.2017
• Subjects: 6H-SiC; 再结晶过程; 晶格缺陷; 结晶相; 退火温度; 透射电子显微镜; 非晶材料; 高分辨电镜
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/34/7/076101

The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of reerystallized layers in 15 keV He＋ ion implanted 6H-SiC （0001） wafers are characterized by means of cross-sectional transmission electron microscopy （XTEM） and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000℃, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.