Studies on the nucleation of MBE grown Ⅲ-nitride nanowires on Si

GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy（MBE）are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 full...

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Published inChinese physics B Vol. 26; no. 1; pp. 344 - 347
Main Author 鄂炎雄 郝智彪 余佳东 吴超 汪莱 熊兵 王健 韩彦军 孙长征 罗毅
Format Journal Article
LanguageEnglish
Published 2017
Subjects
AlN
GaN
Si3N4
分子束外延
成核生长
氮化硅
生长动力学
纳米线
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/1/016103

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Summary:GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy（MBE）are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 fully release the stress upon the interface between GaN NW and amorphous Si3N4 layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of Ⅲ group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.
Bibliography:Yanxiong E,Zhibiao Hao,Jiadong Yu,Chao Wu,Lai Wang,Bing Xiong,Jian Wang,Yanjun Han,Changzheng Sun,Yi Luo（ Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China）
GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy（MBE）are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 fully release the stress upon the interface between GaN NW and amorphous Si3N4 layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of Ⅲ group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.
11-5639/O4
GaN nanowires; AlN nanowires; strain; nucleation
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/1/016103