Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to...

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Bibliographic Details
Published inChinese physics B Vol. 26; no. 8; pp. 536 - 541
Main Author 叶兵 刘杰 王铁山 刘天奇 罗捷 王斌 殷亚楠 姬庆刚 胡培培 孙友梅 侯明东
Format Journal Article
LanguageEnglish
Published 01.08.2017
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/8/088501

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Summary:This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.
Bibliography:Bing Ye1,2,3, Jie Liu1, Tie-Shan Wang3, Tian-Qi Liu1,2, Jie Luo1,2, Bin Wang1,2, Ya-Nan Yin1,2, Qing-Gang ji1,2, Pei-Pei Hu1,2, You-Mei Sun1, and Ming-Dong Hou1( 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China 2 University of Chinese Academy of Sciences (UCAS), Beijing 100049, China 3 Lanzhou University, Lanzhou 730000, China)
single event upset, energy straggle, proton irradiation, nanodevice
11-5639/O4
This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/8/088501