Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter
The thermal failure induced by high power microwave（HPM） in a complementary metal oxide semiconductor（CMOS） inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hot...
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| Published in | Chinese physics B Vol. 26; no. 5; pp. 425 - 430 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2017
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| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/26/5/058502 |
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| Summary: | The thermal failure induced by high power microwave（HPM） in a complementary metal oxide semiconductor（CMOS） inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hotspot temperature and pulse width and between hotspot temperature and frequency are predicted, which reveals a more severe rise in temperature under the influence of microwave with longer width and lower frequency. The temperature variation mechanism and the theoretical temperature model are validated and explained by the simulation. Furthermore, variation trend of damage threshold with microwave parameters is derived theoretically, and the conclusions are consistent with simulation results and reported data. |
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| Bibliography: | The thermal failure induced by high power microwave（HPM） in a complementary metal oxide semiconductor（CMOS） inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hotspot temperature and pulse width and between hotspot temperature and frequency are predicted, which reveals a more severe rise in temperature under the influence of microwave with longer width and lower frequency. The temperature variation mechanism and the theoretical temperature model are validated and explained by the simulation. Furthermore, variation trend of damage threshold with microwave parameters is derived theoretically, and the conclusions are consistent with simulation results and reported data. Yu-Hang Zhang, Chang-Chun Chai, Yang Liu, Yin-Tang Yang, Chun-Lei Shi, Qing-Yang Fan, Yu-Qian Liu（Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics Xidian University, Xi＇ an 710071, China） 11-5639/O4 inverter microwave hotspot validated explained longer complementary terminals junction instance |
| ISSN: | 1674-1056 2058-3834 |
| DOI: | 10.1088/1674-1056/26/5/058502 |