Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained In Ga As symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power a...

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Bibliographic Details
Published inChinese physics B Vol. 24; no. 8; pp. 356 - 361
Main Author 宋晏蓉 郭于鹤洋 张鹏 田金荣
Format Journal Article
LanguageEnglish
Published 01.08.2015
Subjects
Disks
effects;diode-pumped
Gain
Lasers
lasers;thermal
Lasing
mode-locked
Pumps
Quantum wells
Semiconductors
Wavelengths
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/8/084208

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Summary:We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained In Ga As symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength.
Bibliography:11-5639/O4
Song Yan-Rong;Guoyu He-Yang;Zhang Peng;Tian Jin-Rong;College of Applied Sciences, Beijing University of Technology;College of Physics and Electronic Engineering, Chongqing Normal University
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/8/084208