Charging effect of In2O3 nano-particles embedded in polyimide layer for application as non-volatile nano-floating gate memory

• Published in: Current applied physics Vol. 9; no. 1; pp. S43 - S46
• Main Authors: Kim, Seon Pil, Lee, Tae Hee, Lee, Dong Uk, Kim, Eun Kyu, Koo, Hyun-Mo, Cho, Won-Ju, Kim, Young-Ho
• Format: Journal Article
• Language: English
• Published: 한국물리학회 01.01.2009
• Subjects: 물리학
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2008.08.019

The memory charging effect of the nano-floating gate capacitor containing the In2O3 nano-particles embedded in polyimide layer was characterized. Self-assembled In2O3 nano-particles were created by chemical reaction between the polymer precursor and indium film, and then the particles size and density were about 7 nm and 5.8 × 1011 cm-2, respectively. From capacitance–voltage hysteresis originated from electrons charging in the In2O3 nano-particles through tunneling oxide from p-type Si wafer, the flat-band voltage shift was obtained up to about 3.4 V, when the sweeping gate voltage was from -6 to 6 V. The endurance ability of this capacitor showed up to 2 × 105 cycles during the programming at 5 V for 0.2 ms and erasing at -5 V for 1.8 ms processes. KCI Citation Count: 19