High-yield and Reproducible Fabrication of High-Q Optical Micro-resonators on Thin-film Lithium Niobate
Thin-film lithium niobate (TFLN) on insulator has emerged as an ideal platform for communication and quantum optics, making it a subject of extensive research. Previous studies have focused on monolithic electro-optic and acousto-optic devices on lithium niobate on insulator (LNOI) wafers. However,...
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Published in | Journal of physics. Conference series Vol. 2988; no. 1; pp. 12002 - 12008 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
01.03.2025
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Subjects | |
Online Access | Get full text |
ISSN | 1742-6588 1742-6596 |
DOI | 10.1088/1742-6596/2988/1/012002 |
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Summary: | Thin-film lithium niobate (TFLN) on insulator has emerged as an ideal platform for communication and quantum optics, making it a subject of extensive research. Previous studies have focused on monolithic electro-optic and acousto-optic devices on lithium niobate on insulator (LNOI) wafers. However, the fabrication process for achieving ultra-low loss TFLN devices remains challenging. Furthermore, there is insufficient research available regarding large-scale integration of TFLN photonic devices. Here, we propose and demonstrate a high-yield and reproducible fabrication process to characterize the high-Q micro-resonators (MRRs) on X-cut LNOI platform. By measuring the Q factors of MRRs, we can deduce the losses in TFLN optical waveguides and extract the yield accordingly. The fabricated MRR exhibits a lowest loss of 13.3 dB/m with a measured loaded Q factor of 1.5 million. Moreover, the majority of fabricated devices achieve losses below 20 dB/m with an impressive fabrication yield of 89.6%, showcasing advanced fabrication technology capabilities. This work establishes a foundation for large-scale monolithic integration of TFLN devices across various applications. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/2988/1/012002 |