Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions
Spin dynamics in several different types of ferromagnetic metal （FM）/10-nm-thick n-type GaAs quantum well （QW） junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insitu doped lO-nm-thick n-type GaAs QW junction, the spin lifetime of the MnGa/modulation-...
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| Published in | Chinese physics letters Vol. 34; no. 11; pp. 61 - 65 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Chinese Physical Society and IOP Publishing Ltd
01.11.2017
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| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/34/11/116701 |
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| Summary: | Spin dynamics in several different types of ferromagnetic metal （FM）/10-nm-thick n-type GaAs quantum well （QW） junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insitu doped lO-nm-thick n-type GaAs QW junction, the spin lifetime of the MnGa/modulation-doped 10-nm-thick n-type GaAs QW junction is shorter by a factor of 6, consistent with the D＇yakonov Perel＇ spin relaxation mechanism. Meanwhile, compared with the spin lifetime of the MnAs/in-situ doped 10-nm-thick n-type GaAs QW junction, the MnGa/in-situ doped 10-nm-thick n-type GaAs QW junction is of a spin lifetime longer by a factor of 4.2. The later observation is well explained by the Rashba effect in the presence of structure inversion asymmetry, which acts directly on photo-excited electron spins. We demonstrate that MnGa-like FM/in-situ doped 10-nm-thick n-type GaAs QW junctions, which possess relatively low interfaciai potential barriers, are able to provide long spin lifetimes. |
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| Bibliography: | 11-1959/O4 Spin dynamics in several different types of ferromagnetic metal （FM）/10-nm-thick n-type GaAs quantum well （QW） junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insitu doped lO-nm-thick n-type GaAs QW junction, the spin lifetime of the MnGa/modulation-doped 10-nm-thick n-type GaAs QW junction is shorter by a factor of 6, consistent with the D＇yakonov Perel＇ spin relaxation mechanism. Meanwhile, compared with the spin lifetime of the MnAs/in-situ doped 10-nm-thick n-type GaAs QW junction, the MnGa/in-situ doped 10-nm-thick n-type GaAs QW junction is of a spin lifetime longer by a factor of 4.2. The later observation is well explained by the Rashba effect in the presence of structure inversion asymmetry, which acts directly on photo-excited electron spins. We demonstrate that MnGa-like FM/in-situ doped 10-nm-thick n-type GaAs QW junctions, which possess relatively low interfaciai potential barriers, are able to provide long spin lifetimes. Xiao-Chen Ji1,2, Chao Shen1,2, Yuan-Jun Wu1,2 Jun Lu1,2, Hou-Zhi Zheng1,2 （1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ;2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408） |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/34/11/116701 |