The Effect of Ion Current Density on Target Etching in Radio Frequency-Magnetron Sputtering Process

• Published in: Plasma science & technology Vol. 14; no. 3; pp. 235 - 239
• Main Author: 王庆 王永富 巴德纯 岳向吉
• Format: Journal Article
• Language: English
• Published: 01.03.2012
• Subjects: 射频; 放电功率; 气体压力; 氩等离子体; 电流密度; 磁控溅射工艺; 蚀刻; 计算机数据采集系统
• ISSN: 1009-0630
• DOI: 10.1088/1009-0630/14/3/09

The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.