Resistivity Measurements on Germanium for Transistors

This paper discusses a laboratory method which has been found very useful for measuring the resistivity of the semiconductor germanium. The method consists of placing four probes that make contact along a line on the surface of the material. Current is passed through the outer pair of probes and the...

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Bibliographic Details
Published inProceedings of the IRE Vol. 42; no. 2; pp. 420 - 427
Main Author Valdes, L. B.
Format Journal Article
LanguageEnglish
Published IEEE 01.02.1954
Subjects
Conductivity measurement
Crystalline materials
Current measurement
Electrical resistance measurement
Electrodes
Germanium
Laboratories
Probes
Semiconductor materials
Shape measurement
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ISSN0096-8390
DOI10.1109/JRPROC.1954.274680

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Summary:This paper discusses a laboratory method which has been found very useful for measuring the resistivity of the semiconductor germanium. The method consists of placing four probes that make contact along a line on the surface of the material. Current is passed through the outer pair of probes and the floating potential is measured across the inner pair. There are seven cases considered, the probes on a semi-infinite volume of semiconductor material and the probes near six different types of boundaries. Formulas and curves needed to compute resistivity are given for each case.
ISSN:0096-8390
DOI:10.1109/JRPROC.1954.274680