Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

Metal-organic chemical vapor deposition （MOCVD） grown ferromagnetic GaMnN films are investigated by photo- luminescence （PL） measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which th...

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Published inChinese physics B Vol. 23; no. 10; pp. 538 - 540
Main Author 邢海英 徐章程 崔明启 谢玉芯 张国义
Format Journal Article
LanguageEnglish
Published 01.10.2014
Subjects
Chemical vapor deposition
Correlation
Ferromagnetic materials
Ferromagnetism
Magnetic properties
Manganese
MOCVD
Photoluminescence
Valence band
Wavelengths
光致发光
强度比
有机金属
磁特性
能隙
薄膜
金属有机化学气相沉积
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/10/107803

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Summary:Metal-organic chemical vapor deposition （MOCVD） grown ferromagnetic GaMnN films are investigated by photo- luminescence （PL） measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% （[Mn]A =0.75%） but its PL intensity is stronger than other samples＇. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3＋ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.
Bibliography:Xing Hai-Ying, Xu Zhang-Cheng, Cui Ming-Qi, Xie Yu-Xin, and Zhang Guo-Yi（ a） School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China b）Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China C）Research Center for Wide-band Semiconductors, Peking University, Beijing 100871, China
Metal-organic chemical vapor deposition （MOCVD） grown ferromagnetic GaMnN films are investigated by photo- luminescence （PL） measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% （[Mn]A =0.75%） but its PL intensity is stronger than other samples＇. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3＋ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.
GaMnN, photoluminescence, magnetism, metal-organic chemical vapor deposition
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/10/107803