High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process

A self-aligned process to fabricate a ＂metal-quantum dot-metal＂ structure is presented, based on an ＂electron beam lithography, thin film deposition and dry etching process＂. The sacrificial layers used can improve the lift-off process, and novel lithography layouts design can improve the mechanical...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 12; pp. 42 - 47
Main Author 付英春 王晓峰 马刘红 周亚玲 杨香 王晓东 杨富华
Format Journal Article
LanguageEnglish
Published 01.12.2015
Subjects
Compatibility
Deposition
Drying
Electron beam lithography
Phase change
Qunatum dots
Self alignment
Semiconductors
Thin films
兼容
工艺制造
电子束光刻
相变材料
自对准工艺
质量
量子点
金属结构
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/36/12/123004

Cover

More Information
Summary:A self-aligned process to fabricate a ＂metal-quantum dot-metal＂ structure is presented, based on an ＂electron beam lithography, thin film deposition and dry etching process＂. The sacrificial layers used can improve the lift-off process, and novel lithography layouts design can improve the mechanical strength of the fabricated nanostructures. The superiority of the self-aligned process includes low request for overlay accuracy, high compatibility with a variety of materials, and applicable to similar structure devices fabrication. Finally, a phase change memory with fully confined phase-change material node, with the length × width × height of 255 × 45 × 30 nm^3 was demonstrated.
Bibliography:fully confined; nanocontacts; self-aligned; phase change random access memory
Fu Yingchun, Wang Xiaofeng, Ma Liuhong, Zhou Yaling, Yang Xiang, Wang Xiaodong, Yang Fuhua（ Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
A self-aligned process to fabricate a ＂metal-quantum dot-metal＂ structure is presented, based on an ＂electron beam lithography, thin film deposition and dry etching process＂. The sacrificial layers used can improve the lift-off process, and novel lithography layouts design can improve the mechanical strength of the fabricated nanostructures. The superiority of the self-aligned process includes low request for overlay accuracy, high compatibility with a variety of materials, and applicable to similar structure devices fabrication. Finally, a phase change memory with fully confined phase-change material node, with the length × width × height of 255 × 45 × 30 nm^3 was demonstrated.
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/36/12/123004