Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor

• Published in: Transactions of Nonferrous Metals Society of China Vol. 18; no. 5; pp. 1083 - 1088
• Main Author: 阎有花 刘迎春 方玲 朱景森 赵海花 李德仁 卢志超 周少雄
• Format: Journal Article
• Language: English
• Published: China Iron & Steel Research Institute Group, Advanced Technology & Materials Co. Ltd., Beijing 100081, China 01.10.2008
• Subjects: 沉积层序; 金属学; 铜铟薄膜; deposition sequence; precursor; sulfurization; CnInS2 thin film
• ISSN: 1003-6326
• DOI: 10.1016/S1003-6326(08)60185-5

CuInS2 thin films were prepared by sulfurization of Cu-In precursors. The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography, and optical properties of CuInS2 thin films were investigated. X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films. Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used. When the deposition sequence of precursor is In/Cu/In, the CuInS2 thin films show a single-phase chalcopyrite structure with （112） preferred orientation. The surface morphology of CIS films is uniform and compacted. The absorption coefficient is larger than 10^4 cm^-1 with optical band gap Egclose to 1.4 eV.