Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes
The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both m...
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| Published in | Chinese physics B Vol. 25; no. 5; pp. 405 - 409 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/25/5/058101 |
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| Abstract | The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. |
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| AbstractList | The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. |
| Author | 刘扬 杨永春 |
| AuthorAffiliation | School of Resource and Environmental Science, Lanzhou University, Lanzhou 730000, China Key Laboratory of West China＇ s Enviromental Science, Lanzhou 730000, China |
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| Cites_doi | 10.1063/1.120874 10.1109/JPROC.2010.2043210 10.1364/OL.38.000202 10.1149/2.006310ssl 10.1109/JLT.2010.2089602 10.1126/science.265.5174.943 10.1109/TCE.2013.6490243 10.1063/1.4792662 10.1126/science.281.5379.956 10.1063/1.3005640 10.1063/1.3671395 10.1063/1.3647560 10.1063/1.1901836 10.1063/1.2432366 10.1063/1.4820450 10.1016/j.compag.2012.11.012 10.1063/1.3302458 10.1109/TCE.2004.1277847 10.1063/1.4811558 10.1038/nphoton.2009.32 10.1002/anie.v47:35 |
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| Notes | The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. light emitting diodes; droop; Mg doping Yang Liu and Yongchun Yang（School of Resource and Environmental Science, Lanzhou University, Lanzhou 730000, China 2 Key Laboratory of West China＇s Enviromental Science, Lanzhou 730000, China） 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 22 23 Vucic J (8) 2010; 28 Zhiting L (24) 2015; 54 10 Guo L (9) 2007; 2 12 13 14 15 16 17 18 19 1 2 3 Zhao Y K (11) 2015; 24 Zhang N (25) 2013; 30 4 5 6 7 20 21 |
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| Snippet | The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel... The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel... |
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| SubjectTerms | Barriers Current carriers Doping Gallium nitrides Injection current Light-emitting diodes Mg掺杂 QBS Quantum wells Transportation 双波长法 发光二极管 效率下降 注入电流 量子阱 镁掺杂 |
| Title | Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes |
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