Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both m...

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Bibliographic Details
Published inChinese physics B Vol. 25; no. 5; pp. 405 - 409
Main Author 刘扬 杨永春
Format Journal Article
LanguageEnglish
Published 01.05.2016
Subjects
Barriers
Current carriers
Doping
Gallium nitrides
Injection current
Light-emitting diodes
Mg掺杂
QBS
Quantum wells
Transportation
双波长法
发光二极管
效率下降
注入电流
量子阱
镁掺杂
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/25/5/058101

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Summary:The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.
Bibliography:The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.
light emitting diodes; droop; Mg doping
Yang Liu and Yongchun Yang（School of Resource and Environmental Science, Lanzhou University, Lanzhou 730000, China 2 Key Laboratory of West China＇s Enviromental Science, Lanzhou 730000, China）
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/5/058101