杨永春, 刘. (2016). Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes. Chinese physics B, 25(5), 405-409. https://doi.org/10.1088/1674-1056/25/5/058101
Chicago Style (17th ed.) Citation杨永春, 刘扬. "Effects of Mg Doping in the Quantum Barriers on the Efficiency Droop of GaN Based Light Emitting Diodes." Chinese Physics B 25, no. 5 (2016): 405-409. https://doi.org/10.1088/1674-1056/25/5/058101.
MLA (9th ed.) Citation杨永春, 刘扬. "Effects of Mg Doping in the Quantum Barriers on the Efficiency Droop of GaN Based Light Emitting Diodes." Chinese Physics B, vol. 25, no. 5, 2016, pp. 405-409, https://doi.org/10.1088/1674-1056/25/5/058101.
Warning: These citations may not always be 100% accurate.