奎热西, 刘. 王. 伊. 吴. 张. (2014). Photoelectric characteristics of silicon P-N junction with nanopillar texture： Analysis of X-ray photoelectron spectroscopy. Chinese physics B, 23(9), 294-297. https://doi.org/10.1088/1674-1056/23/9/096101
Chicago Style (17th ed.) Citation奎热西, 刘静 王嘉鸥 伊福廷 吴蕊 张念. "Photoelectric Characteristics of Silicon P-N Junction with Nanopillar Texture： Analysis of X-ray Photoelectron Spectroscopy." Chinese Physics B 23, no. 9 (2014): 294-297. https://doi.org/10.1088/1674-1056/23/9/096101.
MLA (9th ed.) Citation奎热西, 刘静 王嘉鸥 伊福廷 吴蕊 张念. "Photoelectric Characteristics of Silicon P-N Junction with Nanopillar Texture： Analysis of X-ray Photoelectron Spectroscopy." Chinese Physics B, vol. 23, no. 9, 2014, pp. 294-297, https://doi.org/10.1088/1674-1056/23/9/096101.