Photoelectric characteristics of silicon P-N junction with nanopillar texture： Analysis of X-ray photoelectron spectroscopy

Silicon nanopillars are fabricated by inductively coupled plasma （ICP） dry etching with the cesium chloride （CsCl） islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus （P） diffusion by liquid dopant source （POCl3） at 870 ℃ to fo...

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Published inChinese physics B Vol. 23; no. 9; pp. 294 - 297
Main Author 刘静 王嘉鸥 伊福廷 吴蕊 张念 奎热西
Format Journal Article
LanguageEnglish
Published 01.09.2014
Subjects
Inductively coupled plasma
Nanostructure
P-n junctions
Photoelectron spectroscopy
PN结
Self assembly
Silicon
Surface layer
Texture
Wafers
X射线光电子能谱法
光电特性
电感耦合等离子体
硅
纳米柱
纹理
能量转移
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/9/096101

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Summary:Silicon nanopillars are fabricated by inductively coupled plasma （ICP） dry etching with the cesium chloride （CsCl） islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus （P） diffusion by liquid dopant source （POCl3） at 870 ℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy （XPS） is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.
Bibliography:Liu Jing, Wang Jia-Ou, Yi Fu-Ting, Wu Rui, Zhang Nian, Ibrahim Kurash（1.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China）
Silicon nanopillars are fabricated by inductively coupled plasma （ICP） dry etching with the cesium chloride （CsCl） islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus （P） diffusion by liquid dopant source （POCl3） at 870 ℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy （XPS） is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.
X-ray photoelectron spectroscopy （XPS）, photoelectric characteristic, P-N junction, silicon nanopillar
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/9/096101