On-wafer de-embedding techniques from 0.1 to 110 GHz

On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving re- suits of thru-reflect-line （TRL） and line-reflect-match （LRM） de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on...

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Published inJournal of semiconductors Vol. 36; no. 5; pp. 72 - 80
Main Author 汤国平 姚鸿飞 马晓华 金智 刘新宇
Format Journal Article
LanguageEnglish
Published 01.05.2015
Subjects
Asymmetry
Frequency bands
Gain
GHz
InP衬底
Interpolation
LRM
Passive components
Power gain
Semiconductors
S参数
千兆赫
去嵌入
嵌入技术
晶圆
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/36/5/054012

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Summary:On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving re- suits of thru-reflect-line （TRL） and line-reflect-match （LRM） de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on an InP substrate. The validity of the de-embedding results is demonstrated through two passive components, and the accuracy of TRL and LRM de-embedding techniques is compared from 0.1 to 110 GHz. By utilizing an LRM technique in 0.1- 40 GHz and a TRL technique in 75-110 GHz, the intrinsic S-parameters of active device HBT in two frequency bands are obtained, and comparisons of the extracted small-signal current gain and the unilateral power gain before and after de-embedding are presented. The whole S-parameters of actual DUT from 0.1 to 110 GHz can be obtained by interpolation.
Bibliography:model; millimeter-wave; de-embed; TRL; LRM
11-5781/TN
On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving re- suits of thru-reflect-line （TRL） and line-reflect-match （LRM） de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on an InP substrate. The validity of the de-embedding results is demonstrated through two passive components, and the accuracy of TRL and LRM de-embedding techniques is compared from 0.1 to 110 GHz. By utilizing an LRM technique in 0.1- 40 GHz and a TRL technique in 75-110 GHz, the intrinsic S-parameters of active device HBT in two frequency bands are obtained, and comparisons of the extracted small-signal current gain and the unilateral power gain before and after de-embedding are presented. The whole S-parameters of actual DUT from 0.1 to 110 GHz can be obtained by interpolation.
Tang Guoping, Yao Hongfei, Ma Xiaohua, Jin Zhi, and Liu Xinyu, 1 School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi＇an 710071, China 2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/5/054012