叶甜春, 滕. 朱. 韩. (2016). Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs. Journal of semiconductors, 37(7), 63-67. https://doi.org/10.1088/1674-4926/37/7/074005
Chicago Style (17th ed.) Citation叶甜春, 滕渊 朱阳军 韩郑生. "Theoretical Modification of the Negative Miller Capacitance During the Switching Transients of IGBTs." Journal of Semiconductors 37, no. 7 (2016): 63-67. https://doi.org/10.1088/1674-4926/37/7/074005.
MLA (9th ed.) Citation叶甜春, 滕渊 朱阳军 韩郑生. "Theoretical Modification of the Negative Miller Capacitance During the Switching Transients of IGBTs." Journal of Semiconductors, vol. 37, no. 7, 2016, pp. 63-67, https://doi.org/10.1088/1674-4926/37/7/074005.
Warning: These citations may not always be 100% accurate.