Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

The insulated gate bipolar transistor （1GBT） has negative Miller capacitance during switching transients. It has conventionally been attributed to the voltage dependency of the Miller capacitance. However this explanation has physical ambiguity, yet, it lacks a discussion of the conditions for the o...

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Published inJournal of semiconductors Vol. 37; no. 7; pp. 63 - 67
Main Author 滕渊 朱阳军 韩郑生 叶甜春
Format Journal Article
LanguageEnglish
Published 01.07.2016
Subjects
Capacitance
Devices
Electric potential
Gain
IGBT
Insulated gate bipolar transistors
PNP晶体管
Semiconductors
Switching
Voltage
开关过程
理论修正
电容
瞬变过程
绝缘栅双极晶体管
设备参数
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/37/7/074005

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Summary:The insulated gate bipolar transistor （1GBT） has negative Miller capacitance during switching transients. It has conventionally been attributed to the voltage dependency of the Miller capacitance. However this explanation has physical ambiguity, yet, it lacks a discussion of the conditions for the occurrence of negative Miller capacitance as well. We argue that it is the current dependence to the Miller capacitance that results in the negative case. In this paper, we provide a modification to the theoretical analysis of this phenomenon. The occurrence condition for it and the device parameters about it are discussed. It is discovered that the negative Miller capacitance must occur during the turn-off process for any IGBT, while it is relatively difficult during the turn-on process. At the device design level, the current gain of the PNP transistor in the IGBT is an important factor for the negative Miller capacitance.
Bibliography:Teng Yuan, Zhu Yangjun, Han Zhengsheng, and Ye Tianchun（Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China）
11-5781/TN
IGBT; negative Miller capacitance; theoretical analysis
The insulated gate bipolar transistor （1GBT） has negative Miller capacitance during switching transients. It has conventionally been attributed to the voltage dependency of the Miller capacitance. However this explanation has physical ambiguity, yet, it lacks a discussion of the conditions for the occurrence of negative Miller capacitance as well. We argue that it is the current dependence to the Miller capacitance that results in the negative case. In this paper, we provide a modification to the theoretical analysis of this phenomenon. The occurrence condition for it and the device parameters about it are discussed. It is discovered that the negative Miller capacitance must occur during the turn-off process for any IGBT, while it is relatively difficult during the turn-on process. At the device design level, the current gain of the PNP transistor in the IGBT is an important factor for the negative Miller capacitance.
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ISSN:1674-4926
DOI:10.1088/1674-4926/37/7/074005