Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks
The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are att...
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| Published in | Journal of semiconductors Vol. 37; no. 5; pp. 48 - 51 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/37/5/054005 |
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| Abstract | The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. |
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| AbstractList | The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. |
| Author | 徐昊 杨红 王艳蓉 王文武 万光星 任尚清 罗维春 祁路伟 赵超 陈大鹏 刘新宇 叶甜春 |
| AuthorAffiliation | Key Laboratory of Microelectronics Devices ＆ Integrated Technology, Institute of Microelectronics, Chinese Academyof Sciences, Beijing 100029, China |
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| Cites_doi | 10.1088/1674-4926/36/1/014007 10.1016/S0167-9317(02)01025-0 10.1063/1.4826918 10.1109/TED.2002.805612 10.1109/55.877204 10.1016/S0026-2714(97)00206-0 10.1088/1674-4926/34/7/076001 10.1016/j.sse.2011.03.015 10.1063/1.1506941 10.1088/1674-4926/34/11/114007 10.1016/0026-2692(95)00107-7 10.1109/TED.2002.805603 10.2200/S00005ED1V01Y200508SSM001 10.1088/0268-1242/15/5/302 |
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| Notes | The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. 11-5781/TN high-k/metal gate stacks; ultra-thin EOT; TZDB; series resistance effect ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 (16) 1999 12 Prasad C (20) Xueli Ma (5) 2013; 34 13 14 15 Sangwoo P (2) Wu E Y (18) 2009; 56 Prasad C (1) Kai Han (4) 2013; 34 Wu E Y (19) 2009; 56 Robin D (17) 2000; 15 7 8 9 Shangqing Ren (6) 2015; 36 Hosoi T (22) Ramey S (3) 10 21 |
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| SubjectTerms | Asymmetry Dielectric breakdown Electrodes Gates Semiconductors Spreading Stacks Tunneling 串联电阻 介质击穿 堆叠 时间 电击穿特性 电阻效应 超薄 金属栅 |
| Title | Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks |
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