叶甜春, 徐. 杨. 王. 王. 万. 任. 罗. 祁. 赵. 陈. 刘. (2016). Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks. Journal of semiconductors, 37(5), 48-51. https://doi.org/10.1088/1674-4926/37/5/054005
Chicago Style (17th ed.) Citation叶甜春, 徐昊 杨红 王艳蓉 王文武 万光星 任尚清 罗维春 祁路伟 赵超 陈大鹏 刘新宇. "Series Resistance Effect on Time Zero Dielectrics Breakdown Characteristics of MOSCAP with Ultra-thin EOT High-k/metal Gate Stacks." Journal of Semiconductors 37, no. 5 (2016): 48-51. https://doi.org/10.1088/1674-4926/37/5/054005.
MLA (9th ed.) Citation叶甜春, 徐昊 杨红 王艳蓉 王文武 万光星 任尚清 罗维春 祁路伟 赵超 陈大鹏 刘新宇. "Series Resistance Effect on Time Zero Dielectrics Breakdown Characteristics of MOSCAP with Ultra-thin EOT High-k/metal Gate Stacks." Journal of Semiconductors, vol. 37, no. 5, 2016, pp. 48-51, https://doi.org/10.1088/1674-4926/37/5/054005.