An aluminum nitride photoconductor for X-ray detection

An AlN photoconductor for X-ray detection has been fabricated,and its response to X-ray irradiation intensity is studied.The photoconductor has a very low leakage current,less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation.The photocurrent measurement results clearly...

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Published inJournal of semiconductors Vol. 33; no. 10; pp. 25 - 28
Main Author 王新建 宋航 李志明 蒋红 黎大兵 缪国庆 陈一仁 孙晓娟
Format Journal Article
LanguageEnglish
Published 01.10.2012
Subjects
ABC模型
Aluminum nitride
Irradiation
Photoconductors
Photocurrent
Photoelectric effect
Semiconductors
Voltage
X-rays
X射线检测
光电流
射线照射
感光体
氮化铝
测定结果
照射强度
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ISSN1674-4926
DOI10.1088/1674-4926/33/10/103002

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Summary:An AlN photoconductor for X-ray detection has been fabricated,and its response to X-ray irradiation intensity is studied.The photoconductor has a very low leakage current,less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation.The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity,and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor.By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed,and a reasonable interpretation of the physical mechanism is obtained.
Bibliography:Wang Xinjian,Song Hang,Li Zhiming,Jiang Hong, Li Dabing,Miao Guoqing,Chen Yiren, Sun Xiaojuan（ 1 State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics, Changchun 130033,China 2 Graduate University of the Chinese Academy of Sciences,Beijing 100039,China）
An AlN photoconductor for X-ray detection has been fabricated,and its response to X-ray irradiation intensity is studied.The photoconductor has a very low leakage current,less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation.The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity,and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor.By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed,and a reasonable interpretation of the physical mechanism is obtained.
11-5781/TN
AlN photoconductor; X-ray detection; recombination
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SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/10/103002