Preparation for Bragg grating of 808 nm distributed feedback laser diode
The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron micro...
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| Published in | Journal of semiconductors Vol. 36; no. 5; pp. 54 - 57 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/36/5/054008 |
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| Abstract | The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity. |
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| AbstractList | The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity. |
| Author | 王勇 刘丹丹 冯国庆 叶镇 高占琦 王晓华 |
| AuthorAffiliation | National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology,Changchun 130022, China |
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| Cites_doi | 10.1049/el:19840055 10.7498/aps.56.1613 10.3788/CJL201441.0609006 10.1007/3-540-47852-3_5 10.1109/JQE.1977.1069328 10.1109/JSTQE.2005.850249 10.1109/3.594865 10.1049/PBCS010E_ch5 10.1109/LPT.2009.2038792 10.1109/3.234429 10.3788/CJL201138.0802005 10.3788/CJL20103709.2190 10.1364/OL.31.003618 10.1109/JQE.2008.924815 10.3788/AOS201232.0705002 |
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| Notes | Wang Yong, Liu Dandan, Feng Guoqing, Ye Zhen, Gao Zhanqi, and Wang Xiaohua National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity. 11-5781/TN distributed feedback （DFB）; laser diode （LD）; grating; holographic photolithography ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Xie H Y (15) 2005; 26 Feng B (21) 2000; 4000 Li Y Y (20) 2009; 15 Wang X W (1) 2007; 5 27 Shi J X (13) 2011; 22 Shi J X (26) 2011; 22 Zhang J C (29) 2012; 33 Wang D L (9) 2010; 47 Fu S H (17) 2007; 56 Jang S J (25) 1982; 207 Fu S H (16) 2006; 27 Chen F (12) 2003; 24 Zhang J C (28) 2011; 32 31 32 11 33 34 35 14 Rudolph D (22) 1967; 78 Wang Y (18) 2007; 28 Yang G S (23) 1994; 1 19 Li B (30) 2012; 42 Klehr A (24) 2006; 6133 2 4 5 6 7 8 Gao L Y (10) 2005; 30 He X R (3) 1999; 12 |
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| SubjectTerms | Bragg gratings Diffraction gratings Diodes Etching Feedback GaAs衬底 Gratings (spectra) Optical microscopy Semiconductors 分布式反馈 制备 半导体激光二极管 原子力显微镜 布拉格光栅 扫描电子显微镜 纳米 |
| Title | Preparation for Bragg grating of 808 nm distributed feedback laser diode |
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