Preparation for Bragg grating of 808 nm distributed feedback laser diode

The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron micro...

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 5; pp. 54 - 57
Main Author 王勇 刘丹丹 冯国庆 叶镇 高占琦 王晓华
Format Journal Article
LanguageEnglish
Published 01.05.2015
Subjects
Bragg gratings
Diffraction gratings
Diodes
Etching
Feedback
GaAs衬底
Gratings (spectra)
Optical microscopy
Semiconductors
分布式反馈
制备
半导体激光二极管
原子力显微镜
布拉格光栅
扫描电子显微镜
纳米
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ISSN1674-4926
DOI10.1088/1674-4926/36/5/054008

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Summary:The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.
Bibliography:Wang Yong, Liu Dandan, Feng Guoqing, Ye Zhen, Gao Zhanqi, and Wang Xiaohua National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.
11-5781/TN
distributed feedback （DFB）; laser diode （LD）; grating; holographic photolithography
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/5/054008