Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure

Band structure of wurtzite （WZ） GaAs nanowires （NWs） is investigated by using photoluminescenee measurements under hydrostatic pressure at 6 K. We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53eV, corresponding to the optical transition between conducti...

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Published inChinese physics letters Vol. 32; no. 7; pp. 195 - 197
Main Author 杨爽 丁琨 窦秀明 喻颖 倪海桥 牛智川 江德生 孙宝权
Format Journal Article
LanguageEnglish
Published 01.07.2015
Subjects
Band structure of solids
Energy gaps (solid state)
Energy use
GaAs
Gallium arsenide
Hydrostatic pressure
Nanowires
Optical transition
Wurtzite
发射能量
工程
直接带隙
纤锌矿结构
纳米线
能带结构
静水压力
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/7/077803

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Summary:Band structure of wurtzite （WZ） GaAs nanowires （NWs） is investigated by using photoluminescenee measurements under hydrostatic pressure at 6 K. We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53eV, corresponding to the optical transition between conduction band Г7c and valence band Г9v in WZ GaAs. The direct-to-pseudodirect bandgap transition can be observed by applying a pressure approximately above 2.5 GPa.
Bibliography:Band structure of wurtzite （WZ） GaAs nanowires （NWs） is investigated by using photoluminescenee measurements under hydrostatic pressure at 6 K. We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53eV, corresponding to the optical transition between conduction band Г7c and valence band Г9v in WZ GaAs. The direct-to-pseudodirect bandgap transition can be observed by applying a pressure approximately above 2.5 GPa.
11-1959/O4
YANG Shuang, DING Kun, DOU Xiu-Ming, YU Ying, NI Hai-Qiao, NIU Zhi-Chuan, JIANG De-Sheng, SUN Bao-Quan（State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083）
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/7/077803