Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition

Polycrystalline silicon （poly-Si） films were prepared by hot-wire chemical vapor deposition （HWCVD） at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃...

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Published inJournal of semiconductors Vol. 36; no. 2; pp. 29 - 33
Main Author 曹勇 张海龙 刘丰珍 朱美芳 董刚强
Format Journal Article
LanguageEnglish
Published 01.02.2015
Subjects
Chemical vapor deposition
Diffraction
Dilution
Epitaxial growth
Hydrogen
Semiconductors
Silicon substrates
Si衬底
X-rays
外延生长
多晶硅薄膜
掠入射X射线衍射
氢稀释
热丝化学气相沉积
衬底温度
霍尔迁移率
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ISSN1674-4926
DOI10.1088/1674-4926/36/2/023004

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Summary:Polycrystalline silicon （poly-Si） films were prepared by hot-wire chemical vapor deposition （HWCVD） at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃ with a different hydrogen dilution ratio （50%-91.7%）. X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present （100） preferred orientation on （100） c-Si substrate in the high hydrogen dilution condition. The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/（V-s） with a carrier concentration of 1.3 × 10^20 cm^-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices.
Bibliography:Cao Yong, Zhang Hailong, Liu Fengzhen,Zhu Meifang, Dong Gangqiang
Polycrystalline silicon （poly-Si） films were prepared by hot-wire chemical vapor deposition （HWCVD） at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃ with a different hydrogen dilution ratio （50%-91.7%）. X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present （100） preferred orientation on （100） c-Si substrate in the high hydrogen dilution condition. The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/（V-s） with a carrier concentration of 1.3 × 10^20 cm^-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices.
11-5781/TN
polycrystalline silicon; hot-wire chemical vapor deposition; low temperature epitaxial growth
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content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/36/2/023004