Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS

A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to form the body contact. Compared with the conventional floating body SOI LDMOS （FB SO...

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Bibliographic Details
Published inJournal of semiconductors Vol. 34; no. 9; pp. 53 - 57
Main Author 蒋永恒 罗小蓉 李燕妃 王沛 范叶 周坤 王琦 胡夏融 张波
Format Journal Article
LanguageEnglish
Published 01.09.2013
Subjects
CMOS兼容
Contact
Devices
Floating structures
LDMOS
Leakage current
Semiconductors
Silicon substrates
SOI器件
Thin films
Touch
导通电阻
接触结构
浮体效应
自加热效应
薄膜SOI
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ISSN1674-4926
DOI10.1088/1674-4926/34/9/094005

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Summary:A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to form the body contact. Compared with the conventional floating body SOI LDMOS （FB SOI LDMOS） structure, the new structure increases the off-state BV by 54%, decreases the specific on resistance by 20%, improves the output characteristics significantly, and suppresses the self-heating effect. Furthermore, the advantages of the low leakage current and low output capacitance of SOI devices do not degrade.
Bibliography:11-5781/TN
thin film SOI LDMOS; body contact; floating body effect; parasitic BJT effect
Jiang Yongheng, Luo Xiaorong, Li Yanfei, Wang Pei, Fan Ye, Zhou Kun, Wang Qi, Hu Xiarong, and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to form the body contact. Compared with the conventional floating body SOI LDMOS （FB SOI LDMOS） structure, the new structure increases the off-state BV by 54%, decreases the specific on resistance by 20%, improves the output characteristics significantly, and suppresses the self-heating effect. Furthermore, the advantages of the low leakage current and low output capacitance of SOI devices do not degrade.
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ISSN:1674-4926
DOI:10.1088/1674-4926/34/9/094005