Influence of gate-source/drain misalignment on the performance of bulk FinFETs by a 3D full band Monte Carlo simulation

• Published in: Journal of semiconductors Vol. 34; no. 4; pp. 42 - 45
• Main Author: 王骏成 杜刚 魏康亮 曾琅 张兴 刘晓彦
• Format: Journal Article
• Language: English
• Published: 01.04.2013
• Subjects: 3D; Bulk transporters; Carrier transport; Computer simulation; FinFET; Misalignment; Monte Carlo methods; Scattering; Semiconductors; Three dimensional; 元件; 性能影响; 散射机制; 散装; 模拟器; 载流子输运
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/34/4/044005

We investigate the influence of gate-source/drain （G-S/D） misalignment on the performance of bulk fin field effect transistors （FinFETs） through the three-dimensional （3D） full band Monte Carlo simulator. Several scat- tering mechanisms, such as acoustic and optical phonon scattering, ionized impurity scattering, impact ionization scattering and surface roughness scattering are considered in our simulator. The influence of G-S/D overlap and underlap on the on-states performance and carrier transport of bulk FinFETs are mainly discussed in our work. Our results show that the on-states currents increase with the increment of G-D/S overlap length and the positions of a potential barrier and average electron energy maximum vary with the G-D/S overlap length. The carrier transport phenomena in bulk FinFETs are due to the effect of scattering and the electric field in the overlap/underlap regime.