Analysis of OFF-state and ON-state performance in a silicon-on-insulator power MOSFET with a low-k dielectric trench

A novel silicon-on-insulator（SOI） MOSFET with a variable low-k dielectric trench（LDT MOSFET） is proposed and its performance and characteristics are investigated.The trench in the drift region between drain and source is filled with low-k dielectric to extend the effective drift region.At OFF state,...

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Bibliographic Details
Published inJournal of semiconductors Vol. 34; no. 7; pp. 79 - 85
Main Author 汪志刚 张波 李肇基
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
Dielectrics
Drains
Drift
High voltages
MOSFETs
Oxides
Semiconductors
Trenches
低k电介质
关机状态
关闭
功率MOSFET
性能
沟道
电荷密度
绝缘体上硅
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ISSN1674-4926
DOI10.1088/1674-4926/34/7/074006

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Summary:A novel silicon-on-insulator（SOI） MOSFET with a variable low-k dielectric trench（LDT MOSFET） is proposed and its performance and characteristics are investigated.The trench in the drift region between drain and source is filled with low-k dielectric to extend the effective drift region.At OFF state,the low-k dielectric trench（LDT） can sustain high voltage and enhance the dielectric field due to the accumulation of ionized charges. At the same time,the vertical dielectric field in the buried oxide can also be enhanced by these ionized charges. Additionally,ON-state analysis of LDT MOSFET demonstrates excellent forward characteristics,such as low gateto -drain charge density（〈 0.6 nC/mm~2） and a robust safe operating area（0-84 V）.
Bibliography:11-5781/TN
Wang Zhigang, Zhang Bo, and Li Zhaoji（ College of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610051, China）
power MOSFET; low-k dielectric trench; reliability; enhanced dielectric field
A novel silicon-on-insulator（SOI） MOSFET with a variable low-k dielectric trench（LDT MOSFET） is proposed and its performance and characteristics are investigated.The trench in the drift region between drain and source is filled with low-k dielectric to extend the effective drift region.At OFF state,the low-k dielectric trench（LDT） can sustain high voltage and enhance the dielectric field due to the accumulation of ionized charges. At the same time,the vertical dielectric field in the buried oxide can also be enhanced by these ionized charges. Additionally,ON-state analysis of LDT MOSFET demonstrates excellent forward characteristics,such as low gateto -drain charge density（〈 0.6 nC/mm~2） and a robust safe operating area（0-84 V）.
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ISSN:1674-4926
DOI:10.1088/1674-4926/34/7/074006