Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip

• Published in: Journal of semiconductors Vol. 30; no. 6; pp. 34 - 37
• Main Author: 刘彦伯 张挺 钮晓鸣 宋志棠 闵国全 张静 周伟民 万永中 张剑平 李小丽 封松林
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2009
• Subjects: Ge2Sb2Te5; 原位X射线衍射; 原子力显微镜; 温度变化; 热稳定性; 电阻变化; 相变材料; 纳米
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/6/063003

The Si2Sb2Te5 phase change material has been studied by applying a nano-tip（30 nm in diameter） on an atomic force microscopy system.Memory switching from a high resistance state to a low resistance state has been achieved,with a resistance change of about 1000 times.In a typical I-V curve,the current increases significantly after the voltage exceeds～4.3 V.The phase transformation of a Si2Sb2Te5 film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements.The thermal stability of Si2Sb2Te5 and Ge2Sb2Te5 was characterized and compared as well.