ESD protection design for the gate oxide of an RF-LDMOS

This paper presents the investigation of integrated electrostatic discharge （ESD） protection design for the gate oxide of an RFLDMOS （radio frequency lateral double diffusion MOS）. Through a comprehensive dis cussion of experimental and simulated results, a cascoded NMOS is presented as appropriate...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 4; pp. 59 - 63
Main Author 姜一波 杜寰 曾传滨 韩郑生
Format Journal Article
LanguageEnglish
Published 01.04.2012
Subjects
Diffusion
Electric potential
ESD保护
Gates
Metal oxide semiconductors
NMOS
Oxides
Semiconductors
Simulation
Voltage
保护设计
双扩散
栅氧化层
管理层
金属氧化物半导体
静电放电
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ISSN1674-4926
DOI10.1088/1674-4926/33/4/044007

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Summary:This paper presents the investigation of integrated electrostatic discharge （ESD） protection design for the gate oxide of an RFLDMOS （radio frequency lateral double diffusion MOS）. Through a comprehensive dis cussion of experimental and simulated results, a cascoded NMOS is presented as appropriate integrated gate oxide ESD protection with a high holding voltage and a flexible ESD design window.
Bibliography:Jiang Yibo, Du Huan, Zeng Chuanbin, and Han Zhengsheng（a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China）
This paper presents the investigation of integrated electrostatic discharge （ESD） protection design for the gate oxide of an RFLDMOS （radio frequency lateral double diffusion MOS）. Through a comprehensive dis cussion of experimental and simulated results, a cascoded NMOS is presented as appropriate integrated gate oxide ESD protection with a high holding voltage and a flexible ESD design window.
11-5781/TN
cascoded NMOS; ESD; high voltage technology; radio frequency lateral double diffusion MOS; BVengineering implant
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/33/4/044007