李肇基, 范. 张. 罗. 汪. (2013). Analytical model for high-voltage SOI device with composite-k dielectric buried layer. Journal of semiconductors, 34(9), 67-72. https://doi.org/10.1088/1674-4926/34/9/094008
Chicago Style (17th ed.) Citation李肇基, 范杰 张波 罗小蓉 汪志刚. "Analytical Model for High-voltage SOI Device with Composite-k Dielectric Buried Layer." Journal of Semiconductors 34, no. 9 (2013): 67-72. https://doi.org/10.1088/1674-4926/34/9/094008.
MLA (9th ed.) Citation李肇基, 范杰 张波 罗小蓉 汪志刚. "Analytical Model for High-voltage SOI Device with Composite-k Dielectric Buried Layer." Journal of Semiconductors, vol. 34, no. 9, 2013, pp. 67-72, https://doi.org/10.1088/1674-4926/34/9/094008.
Warning: These citations may not always be 100% accurate.