The resonance frequency shift in an SOI nano-waveguide microring resonator
To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systemati- cally designed and fabricated. SiO2 insulating layers with different thicknesses were de...
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| Published in | Journal of semiconductors Vol. 34; no. 4; pp. 60 - 63 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.04.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/34/4/044009 |
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| Abstract | To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systemati- cally designed and fabricated. SiO2 insulating layers with different thicknesses were deposited for analysis of the frequency shift characteristics. By testing the resonance transmission spectrum power of this structure, it is found that there are blue shifts after SiO2 deposition, and the frequency shift value of a structure with a 500 nm SiO2 insulating layer deposited is 0.8 nm, that is 0.24 THz at the resonance point where wavelength is around 1550 nm. Taking advantage of this conclusion, efficient optical modulation is available by choosing different frequency band resonance wavelengths to narrow the frequency modulation range. |
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| AbstractList | To research the effect of a deposited SiO sub(2) insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systematically designed and fabricated. SiO sub(2) insulating layers with different thicknesses were deposited for analysis of the frequency shift characteristics. By testing the resonance transmission spectrum power of this structure, it is found that there are blue shifts after SiO sub(2) deposition, and the frequency shift value of a structure with a 500 nm SiO sub(2) insulating layer deposited is 0.8 nm, that is 0.24 THz at the resonance point where wavelength is around 1550 nm. Taking advantage of this conclusion, efficient optical modulation is available by choosing different frequency band resonance wavelengths to narrow the frequency modulation range. To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systemati- cally designed and fabricated. SiO2 insulating layers with different thicknesses were deposited for analysis of the frequency shift characteristics. By testing the resonance transmission spectrum power of this structure, it is found that there are blue shifts after SiO2 deposition, and the frequency shift value of a structure with a 500 nm SiO2 insulating layer deposited is 0.8 nm, that is 0.24 THz at the resonance point where wavelength is around 1550 nm. Taking advantage of this conclusion, efficient optical modulation is available by choosing different frequency band resonance wavelengths to narrow the frequency modulation range. |
| Author | 臧俊斌 薛晨阳 韦丽萍 刘超 崔丹凤 王永华 张文栋 |
| AuthorAffiliation | Key Laboratory of Instrumentation Science ＆ Dynamic Measurement （North University of China）, Ministry of Education,Taiyuan 030051, China Science and Technology on Electronic Test ＆ Measurement Laboratory （North University of China）, Taiyuan 030051, China |
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| Cites_doi | 10.1088/1674-4926/30/5/055012 10.1088/1674-4926/30/4/044008 10.1016/j.optcom.2008.09.052 10.1117/12.760218 10.1364/OE.15.007610 10.1364/OE.20.012261 10.1364/OE.16.004309 10.1109/TC.2008.78 10.1364/OE.19.000861 10.1109/68.992585 10.1063/1.108911 10.1109/5.867687 10.1364/OE.17.005118 10.1364/OL.26.001236 10.1109/JLT.2004.834471 |
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| Notes | silicon-on-insulator; microring resonator; electro-optic modulator; nanophotonic waveguide 11-5781/TN To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systemati- cally designed and fabricated. SiO2 insulating layers with different thicknesses were deposited for analysis of the frequency shift characteristics. By testing the resonance transmission spectrum power of this structure, it is found that there are blue shifts after SiO2 deposition, and the frequency shift value of a structure with a 500 nm SiO2 insulating layer deposited is 0.8 nm, that is 0.24 THz at the resonance point where wavelength is around 1550 nm. Taking advantage of this conclusion, efficient optical modulation is available by choosing different frequency band resonance wavelengths to narrow the frequency modulation range. Zang Junbin, Xue Chenyang, Wei Liping, Liu Chao, Cui Danfeng, Wang Yonghua, and Zhang Wendong（ 1Key Laboratory of Instrumentation Science ＆ Dynamic Measurement （North University of China）, Ministry of Education, Taiyuan 030051, China 2Science and Technology on Electronic Test ＆ Measurement Laboratory （North University of China）, Taiyuan 030051, China） ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| References | 11 Yu Changliang (3) 2009; 30 12 13 14 15 Zhang Yunxiao (8) 2009; 30 1 2 4 5 6 7 9 10 |
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| Snippet | To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration... To research the effect of a deposited SiO sub(2) insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration... |
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| SubjectTerms | Deposition Frequency modulation Frequency shift Insulating layers Nanocomposites Nanostructure Semiconductors Silicon dioxide SOI 共振点 制造过程 微环 波导 环形谐振器 纳米 频率偏移 |
| Title | The resonance frequency shift in an SOI nano-waveguide microring resonator |
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