The resonance frequency shift in an SOI nano-waveguide microring resonator

To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systemati- cally designed and fabricated. SiO2 insulating layers with different thicknesses were de...

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Published inJournal of semiconductors Vol. 34; no. 4; pp. 60 - 63
Main Author 臧俊斌 薛晨阳 韦丽萍 刘超 崔丹凤 王永华 张文栋
Format Journal Article
LanguageEnglish
Published 01.04.2013
Subjects
Deposition
Frequency modulation
Frequency shift
Insulating layers
Nanocomposites
Nanostructure
Semiconductors
Silicon dioxide
SOI
共振点
制造过程
微环
波导
环形谐振器
纳米
频率偏移
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ISSN1674-4926
DOI10.1088/1674-4926/34/4/044009

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Summary:To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systemati- cally designed and fabricated. SiO2 insulating layers with different thicknesses were deposited for analysis of the frequency shift characteristics. By testing the resonance transmission spectrum power of this structure, it is found that there are blue shifts after SiO2 deposition, and the frequency shift value of a structure with a 500 nm SiO2 insulating layer deposited is 0.8 nm, that is 0.24 THz at the resonance point where wavelength is around 1550 nm. Taking advantage of this conclusion, efficient optical modulation is available by choosing different frequency band resonance wavelengths to narrow the frequency modulation range.
Bibliography:silicon-on-insulator; microring resonator; electro-optic modulator; nanophotonic waveguide
11-5781/TN
To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systemati- cally designed and fabricated. SiO2 insulating layers with different thicknesses were deposited for analysis of the frequency shift characteristics. By testing the resonance transmission spectrum power of this structure, it is found that there are blue shifts after SiO2 deposition, and the frequency shift value of a structure with a 500 nm SiO2 insulating layer deposited is 0.8 nm, that is 0.24 THz at the resonance point where wavelength is around 1550 nm. Taking advantage of this conclusion, efficient optical modulation is available by choosing different frequency band resonance wavelengths to narrow the frequency modulation range.
Zang Junbin, Xue Chenyang, Wei Liping, Liu Chao, Cui Danfeng, Wang Yonghua, and Zhang Wendong（ 1Key Laboratory of Instrumentation Science ＆ Dynamic Measurement （North University of China）, Ministry of Education, Taiyuan 030051, China 2Science and Technology on Electronic Test ＆ Measurement Laboratory （North University of China）, Taiyuan 030051, China）
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ISSN:1674-4926
DOI:10.1088/1674-4926/34/4/044009