Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations

Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13,...

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Bibliographic Details
Published inChinese physics C Vol. 35; no. 9; pp. 885 - 889
Main Authors Liu, Chun-Bao (纯宝 刘), Wang, Zhi-Guang (志光 王)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2011
Subjects
PROM
SiO2薄膜
快重离子辐照
拉曼光谱
拉曼散射
能量密度
重离子照射
高能重离子辐照
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ISSN1674-1137
0254-3052
2058-6132
DOI10.1088/1674-1137/35/9/019

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Summary:Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13, 1.0× 10^14 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. Prom the obtained Raman spectra, we deduced that Si-C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the fluence. The possible modification process of C-doped discussed. inclusion size decreased with increasing the irradiation a-SiO2 under swift heavy ion irradiations was briefly
Bibliography:Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13, 1.0× 10^14 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. Prom the obtained Raman spectra, we deduced that Si-C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the fluence. The possible modification process of C-doped discussed. inclusion size decreased with increasing the irradiation a-SiO2 under swift heavy ion irradiations was briefly
11-5641/O4
swift heavy ion irradiation, C-doped SiO2, Raman spectroscopy
ISSN:1674-1137
0254-3052
2058-6132
DOI:10.1088/1674-1137/35/9/019