Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations
Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13,...
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Published in | Chinese physics C Vol. 35; no. 9; pp. 885 - 889 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.09.2011
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Subjects | |
Online Access | Get full text |
ISSN | 1674-1137 0254-3052 2058-6132 |
DOI | 10.1088/1674-1137/35/9/019 |
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Summary: | Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13, 1.0× 10^14 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. Prom the obtained Raman spectra, we deduced that Si-C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the fluence. The possible modification process of C-doped discussed. inclusion size decreased with increasing the irradiation a-SiO2 under swift heavy ion irradiations was briefly |
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Bibliography: | Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13, 1.0× 10^14 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. Prom the obtained Raman spectra, we deduced that Si-C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the fluence. The possible modification process of C-doped discussed. inclusion size decreased with increasing the irradiation a-SiO2 under swift heavy ion irradiations was briefly 11-5641/O4 swift heavy ion irradiation, C-doped SiO2, Raman spectroscopy |
ISSN: | 1674-1137 0254-3052 2058-6132 |
DOI: | 10.1088/1674-1137/35/9/019 |